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Items: 13

1.

Atomic-Scale Tuning of Graphene/Cubic-SiC Schottky Junction for Stable Low-Bias Photoelectrochemical Solar-to-Fuel Conversion.

Li H, Shi Y, Shang H, Wang W, Lu J, Zakharov AA, Hultman L, Uhrberg RIG, Syvajarvi M, Yakimova R, Zhang L, Sun J.

ACS Nano. 2020 Apr 3. doi: 10.1021/acsnano.0c00986. [Epub ahead of print]

PMID:
32243124
2.

Ballistic tracks in graphene nanoribbons.

Aprojanz J, Power SR, Bampoulis P, Roche S, Jauho AP, Zandvliet HJW, Zakharov AA, Tegenkamp C.

Nat Commun. 2018 Oct 24;9(1):4426. doi: 10.1038/s41467-018-06940-5.

3.

Flat-Band Electronic Structure and Interlayer Spacing Influence in Rhombohedral Four-Layer Graphene.

Wang W, Shi Y, Zakharov AA, Syväjärvi M, Yakimova R, Uhrberg RIG, Sun J.

Nano Lett. 2018 Sep 12;18(9):5862-5866. doi: 10.1021/acs.nanolett.8b02530. Epub 2018 Aug 24.

4.

In Situ Patterning of Ultrasharp Dopant Profiles in Silicon.

Cooil SP, Mazzola F, Klemm HW, Peschel G, Niu YR, Zakharov AA, Simmons MY, Schmidt T, Evans DA, Miwa JA, Wells JW.

ACS Nano. 2017 Feb 28;11(2):1683-1688. doi: 10.1021/acsnano.6b07359. Epub 2017 Feb 13.

PMID:
28182399
5.

Electron microscopy imaging of proteins on gallium phosphide semiconductor nanowires.

Hjort M, Bauer M, Gunnarsson S, Mårsell E, Zakharov AA, Karlsson G, Sanfins E, Prinz CN, Wallenberg R, Cedervall T, Mikkelsen A.

Nanoscale. 2016 Feb 21;8(7):3936-43. doi: 10.1039/c5nr08888g.

PMID:
26838122
6.

Soft X-ray Exposure Promotes Na Intercalation in Graphene Grown on Si-Face SiC.

Watcharinyanon S, Xia C, Niu Y, Zakharov AA, Johansson LI, Yakimova R, Virojanadara C.

Materials (Basel). 2015 Jul 28;8(8):4768-4777. doi: 10.3390/ma8084768.

7.

Manipulating the dynamics of self-propelled gallium droplets by gold nanoparticles and nanoscale surface morphology.

Zakharov AA, Mårsell E, Hilner E, Timm R, Andersen JN, Lundgren E, Mikkelsen A.

ACS Nano. 2015 May 26;9(5):5422-31. doi: 10.1021/acsnano.5b01228. Epub 2015 May 1.

PMID:
25880600
8.

Electronic and structural differences between wurtzite and zinc blende InAs nanowire surfaces: experiment and theory.

Hjort M, Lehmann S, Knutsson J, Zakharov AA, Du YA, Sakong S, Timm R, Nylund G, Lundgren E, Kratzer P, Dick KA, Mikkelsen A.

ACS Nano. 2014 Dec 23;8(12):12346-55. doi: 10.1021/nn504795v. Epub 2014 Dec 4.

9.

Rotated domain network in graphene on cubic-SiC(001).

Chaika AN, Molodtsova OV, Zakharov AA, Marchenko D, Sánchez-Barriga J, Varykhalov A, Babenkov SV, Portail M, Zielinski M, Murphy BE, Krasnikov SA, Lübben O, Shvets IV, Aristov VY.

Nanotechnology. 2014 Apr 4;25(13):135605. doi: 10.1088/0957-4484/25/13/135605. Epub 2014 Mar 4.

PMID:
24594516
10.

Surface chemistry, structure, and electronic properties from microns to the atomic scale of axially doped semiconductor nanowires.

Hjort M, Wallentin J, Timm R, Zakharov AA, Håkanson U, Andersen JN, Lundgren E, Samuelson L, Borgström MT, Mikkelsen A.

ACS Nano. 2012 Nov 27;6(11):9679-89. doi: 10.1021/nn303107g. Epub 2012 Oct 24.

PMID:
23062066
11.

Growth mechanism of self-catalyzed group III-V nanowires.

Mandl B, Stangl J, Hilner E, Zakharov AA, Hillerich K, Dey AW, Samuelson L, Bauer G, Deppert K, Mikkelsen A.

Nano Lett. 2010 Nov 10;10(11):4443-9. doi: 10.1021/nl1022699.

12.

Graphene synthesis on cubic SiC/Si wafers. perspectives for mass production of graphene-based electronic devices.

Aristov VY, Urbanik G, Kummer K, Vyalikh DV, Molodtsova OV, Preobrajenski AB, Zakharov AA, Hess C, Hänke T, Büchner B, Vobornik I, Fujii J, Panaccione G, Ossipyan YA, Knupfer M.

Nano Lett. 2010 Mar 10;10(3):992-5. doi: 10.1021/nl904115h.

PMID:
20141155
13.

Ordering of the nanoscale step morphology as a mechanism for droplet self-propulsion.

Hilner E, Zakharov AA, Schulte K, Kratzer P, Andersen JN, Lundgren E, Mikkelsen A.

Nano Lett. 2009 Jul;9(7):2710-4. doi: 10.1021/nl9011886.

PMID:
19507835

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