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Items: 4

1.

Growth and Fabrication of High-Quality Single Nanowire Devices with Radial p-i-n Junctions.

Zhang Y, Sanchez AM, Aagesen M, Huo S, Fonseka HA, Gott JA, Kim D, Yu X, Chen X, Xu J, Li T, Zeng H, Boras G, Liu H.

Small. 2019 Jan;15(3):e1803684. doi: 10.1002/smll.201803684. Epub 2018 Dec 17.

PMID:
30556282
2.

Electron-initiated low noise 1064 nm InGaAsP/InAlAs avalanche photodetectors.

Ma Y, Zhang Y, Gu Y, Shi Y, Chen X, Ji W, Du B, Shao X, Fang J.

Opt Express. 2018 Jan 22;26(2):1028-1037. doi: 10.1364/OE.26.001028.

PMID:
29401975
3.

Impact of etching on the surface leakage generation in mesa-type InGaAs/InAlAs avalanche photodetectors.

Ma Y, Zhang Y, Gu Y, Chen X, Shi Y, Ji W, Xi S, Du B, Li X, Tang H, Li Y, Fang J.

Opt Express. 2016 Apr 4;24(7):7823-34. doi: 10.1364/OE.24.007823.

PMID:
27137065
4.

Tailoring the performances of low operating voltage InAlAs/InGaAs avalanche photodetectors.

Ma Y, Zhang Y, Gu Y, Chen X, Xi S, Du B, Li H.

Opt Express. 2015 Jul 27;23(15):19278-87. doi: 10.1364/OE.23.019278.

PMID:
26367589

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