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Items: 10

1.

Excitonic Aharonov-Bohm Oscillations in Core-Shell Nanowires.

Corfdir P, Marquardt O, Lewis RB, Sinito C, Ramsteiner M, Trampert A, Jahn U, Geelhaar L, Brandt O, Fomin VM.

Adv Mater. 2019 Jan;31(3):e1805645. doi: 10.1002/adma.201805645. Epub 2018 Nov 20.

PMID:
30461088
2.

Efficient methodology to correlate structural with optical properties of GaAs nanowires based on scanning electron microscopy.

Lin WH, Jahn U, Küpers H, Luna E, Lewis RB, Geelhaar L, Brandt O.

Nanotechnology. 2017 Oct 13;28(41):415703. doi: 10.1088/1361-6528/aa8394. Epub 2017 Aug 2.

PMID:
28767046
3.

Self-Assembly of InAs Nanostructures on the Sidewalls of GaAs Nanowires Directed by a Bi Surfactant.

Lewis RB, Corfdir P, Herranz J, Küpers H, Jahn U, Brandt O, Geelhaar L.

Nano Lett. 2017 Jul 12;17(7):4255-4260. doi: 10.1021/acs.nanolett.7b01185. Epub 2017 Jun 29.

PMID:
28654278
4.

Quenching of the luminescence intensity of GaN nanowires under electron beam exposure: impact of C adsorption on the exciton lifetime.

Lähnemann J, Flissikowski T, Wölz M, Geelhaar L, Grahn HT, Brandt O, Jahn U.

Nanotechnology. 2016 Nov 11;27(45):455706. Epub 2016 Oct 7.

PMID:
27713184
5.

Observation of Dielectrically Confined Excitons in Ultrathin GaN Nanowires up to Room Temperature.

Zettler JK, Corfdir P, Hauswald C, Luna E, Jahn U, Flissikowski T, Schmidt E, Ronning C, Trampert A, Geelhaar L, Grahn HT, Brandt O, Fernández-Garrido S.

Nano Lett. 2016 Feb 10;16(2):973-80. doi: 10.1021/acs.nanolett.5b03931. Epub 2016 Jan 6.

PMID:
26675526
6.

Metamorphic GaAs/GaAsBi Heterostructured Nanowires.

Ishikawa F, Akamatsu Y, Watanabe K, Uesugi F, Asahina S, Jahn U, Shimomura S.

Nano Lett. 2015 Nov 11;15(11):7265-72. doi: 10.1021/acs.nanolett.5b02316. Epub 2015 Oct 28.

PMID:
26501188
7.

Coaxial multishell (In,Ga)As/GaAs nanowires for near-infrared emission on Si substrates.

Dimakis E, Jahn U, Ramsteiner M, Tahraoui A, Grandal J, Kong X, Marquardt O, Trampert A, Riechert H, Geelhaar L.

Nano Lett. 2014 May 14;14(5):2604-9. doi: 10.1021/nl500428v. Epub 2014 Apr 1.

PMID:
24678901
8.

Control over the number density and diameter of GaAs nanowires on Si(111) mediated by droplet epitaxy.

Somaschini C, Bietti S, Trampert A, Jahn U, Hauswald C, Riechert H, Sanguinetti S, Geelhaar L.

Nano Lett. 2013 Aug 14;13(8):3607-13. doi: 10.1021/nl401404w. Epub 2013 Aug 1.

PMID:
23898953
9.

Gallium nitride heterostructures on 3D structured silicon.

Fündling S, Sökmen U, Peiner E, Weimann T, Hinze P, Jahn U, Trampert A, Riechert H, Bakin A, Wehmann HH, Waag A.

Nanotechnology. 2008 Oct 8;19(40):405301. doi: 10.1088/0957-4484/19/40/405301. Epub 2008 Aug 20.

PMID:
21832611
10.

Columnar AlGaN/GaN nanocavities with AlN/GaN Bragg reflectors grown by molecular beam epitaxy on Si(111).

Ristić J, Calleja E, Trampert A, Fernández-Garrido S, Rivera C, Jahn U, Ploog KH.

Phys Rev Lett. 2005 Apr 15;94(14):146102. Epub 2005 Apr 12.

PMID:
15904080

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