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Items: 1 to 20 of 47

1.

Selectively Metallized 2D Materials for Simple Logic Devices.

Dathbun A, Kim Y, Choi Y, Sun J, Kim S, Kang B, Kang MS, Hwang DK, Lee S, Lee C, Cho JH.

ACS Appl Mater Interfaces. 2019 May 22;11(20):18571-18579. doi: 10.1021/acsami.9b03078. Epub 2019 May 13.

PMID:
31017757
2.

2D-Organic Hybrid Heterostructures for Optoelectronic Applications.

Sun J, Choi Y, Choi YJ, Kim S, Park JH, Lee S, Cho JH.

Adv Mater. 2019 Feb 20:e1803831. doi: 10.1002/adma.201803831. [Epub ahead of print] Review.

PMID:
30786064
3.

HfO2/HfS2 hybrid heterostructure fabricated via controllable chemical conversion of two-dimensional HfS2.

Lai S, Byeon S, Jang SK, Lee J, Lee BH, Park JH, Kim YH, Lee S.

Nanoscale. 2018 Oct 21;10(39):18758-18766. doi: 10.1039/c8nr06020g. Epub 2018 Oct 2.

PMID:
30276384
4.

Roll-to-roll redox-welding and embedding for silver nanowire network electrodes.

Kim Y, Sul YE, Kang H, Choi Y, Lim HS, Lee S, Pu L, Yi GR, Cho SM, Cho JH.

Nanoscale. 2018 Oct 21;10(39):18627-18634. doi: 10.1039/c8nr01040d. Epub 2018 Sep 27.

PMID:
30259934
5.

Highly Sensitive and Reusable Membraneless Field-Effect Transistor (FET)-Type Tungsten Diselenide (WSe2) Biosensors.

Lee HW, Kang DH, Cho JH, Lee S, Jun DH, Park JH.

ACS Appl Mater Interfaces. 2018 May 30;10(21):17639-17645. doi: 10.1021/acsami.8b03432. Epub 2018 May 16.

PMID:
29767497
6.

Organic field-effect transistors integrated with Ti2CTx electrodes.

Lai S, Jang SK, Cho JH, Lee S.

Nanoscale. 2018 Mar 15;10(11):5191-5197. doi: 10.1039/c7nr08677f.

PMID:
29493686
7.

Defect-selective dry etching for quick and easy probing of hexagonal boron nitride domains.

Wu Q, Lee J, Park S, Woo HJ, Lee S, Song YJ.

Nanotechnology. 2018 Mar 23;29(12):125704. doi: 10.1088/1361-6528/aaa933.

PMID:
29350632
8.

Epitaxial Synthesis of Molybdenum Carbide and Formation of a Mo2C/MoS2 Hybrid Structure via Chemical Conversion of Molybdenum Disulfide.

Jeon J, Park Y, Choi S, Lee J, Lim SS, Lee BH, Song YJ, Cho JH, Jang YH, Lee S.

ACS Nano. 2018 Jan 23;12(1):338-346. doi: 10.1021/acsnano.7b06417. Epub 2018 Jan 11.

PMID:
29298050
9.

Generalized Scheme for High Performing Photodetectors with a p-Type 2D Channel Layer and n-Type Nanoparticles.

Jia J, Jeon S, Jeon J, Xu J, Song YJ, Cho JH, Lee BH, Song JD, Kim HJ, Hwang E, Lee S.

Small. 2018 Mar;14(9). doi: 10.1002/smll.201703065. Epub 2017 Dec 18.

PMID:
29251414
10.

Poly-4-vinylphenol (PVP) and Poly(melamine-co-formaldehyde) (PMF)-Based Atomic Switching Device and Its Application to Logic Gate Circuits with Low Operating Voltage.

Kang DH, Choi WY, Woo H, Jang S, Park HY, Shim J, Choi JW, Kim S, Jeon S, Lee S, Park JH.

ACS Appl Mater Interfaces. 2017 Aug 16;9(32):27073-27082. doi: 10.1021/acsami.7b07549. Epub 2017 Aug 4.

PMID:
28777534
11.

High performance bi-layer atomic switching devices.

Ju JH, Jang SK, Son H, Park JH, Lee S.

Nanoscale. 2017 Jun 22;9(24):8373-8379. doi: 10.1039/c7nr01035d.

PMID:
28594423
12.

Epitaxial Growth of Large-Grain NiSe Films by Solid-State Reaction for High-Responsivity Photodetector Arrays.

Cai C, Ma Y, Jeon J, Huang F, Jia F, Lai S, Xu Z, Wu C, Zhao R, Hao Y, Chen Y, Lee S, Wang M.

Adv Mater. 2017 May;29(17). doi: 10.1002/adma.201606180. Epub 2017 Mar 1.

PMID:
28247442
13.

Large-Area Highly Conductive Transparent Two-Dimensional Ti2CTx Film.

Yang Y, Umrao S, Lai S, Lee S.

J Phys Chem Lett. 2017 Feb 16;8(4):859-865. doi: 10.1021/acs.jpclett.6b03064. Epub 2017 Feb 7.

PMID:
28157319
14.

A homogeneous atomic layer MoS2(1-x)Se2x alloy prepared by low-pressure chemical vapor deposition, and its properties.

Umrao S, Jeon J, Jeon SM, Choi YJ, Lee S.

Nanoscale. 2017 Jan 5;9(2):594-603. doi: 10.1039/c6nr07240b.

PMID:
27934991
15.

Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic.

Shim J, Oh S, Kang DH, Jo SH, Ali MH, Choi WY, Heo K, Jeon J, Lee S, Kim M, Song YJ, Park JH.

Nat Commun. 2016 Nov 7;7:13413. doi: 10.1038/ncomms13413.

16.

M-DNA/Transition Metal Dichalcogenide Hybrid Structure-based Bio-FET sensor with Ultra-high Sensitivity.

Park HY, Dugasani SR, Kang DH, Yoo G, Kim J, Gnapareddy B, Jeon J, Kim M, Song YJ, Lee S, Heo J, Jeon YJ, Park SH, Park JH.

Sci Rep. 2016 Oct 24;6:35733. doi: 10.1038/srep35733.

17.

Size-tunable synthesis of monolayer MoS2 nanoparticles and their applications in non-volatile memory devices.

Jeon J, Lee J, Yoo G, Park JH, Yeom GY, Jang YH, Lee S.

Nanoscale. 2016 Sep 29;8(38):16995-17003.

PMID:
27714115
18.

Photodetectors: Broad Detection Range Rhenium Diselenide Photodetector Enhanced by (3-Aminopropyl)Triethoxysilane and Triphenylphosphine Treatment (Adv. Mater. 31/2016).

Jo SH, Park HY, Kang DH, Shim J, Jeon J, Choi S, Kim M, Park Y, Lee J, Song YJ, Lee S, Park JH.

Adv Mater. 2016 Aug;28(31):6518. doi: 10.1002/adma.201670212.

PMID:
27511529
19.

Synthesis and Characterization of Hexagonal Boron Nitride as a Gate Dielectric.

Jang SK, Youn J, Song YJ, Lee S.

Sci Rep. 2016 Jul 26;6:30449. doi: 10.1038/srep30449.

20.

An Ultrahigh-Performance Photodetector based on a Perovskite-Transition-Metal-Dichalcogenide Hybrid Structure.

Kang DH, Pae SR, Shim J, Yoo G, Jeon J, Leem JW, Yu JS, Lee S, Shin B, Park JH.

Adv Mater. 2016 Sep;28(35):7799-806. doi: 10.1002/adma.201600992. Epub 2016 Jun 28.

PMID:
27352229

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