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Items: 1 to 20 of 22

1.

Investigation of direct inkjet-printed versus spin-coated ZrO2 for sputter IGZO thin film transistor.

Cai W, Ning H, Zhu Z, Wei J, Zhou S, Yao R, Fang Z, Huang X, Lu X, Peng J.

Nanoscale Res Lett. 2019 Mar 5;14(1):80. doi: 10.1186/s11671-019-2905-2.

2.

A Simple, Low Cost Ink System for Drop-on-Demand Printing High Performance Metal Oxide Dielectric Film at Low Temperature.

Zhu Z, Zhang J, Zhou Z, Ning H, Cai W, Wei J, Zhou S, Yao R, Lu X, Peng J.

ACS Appl Mater Interfaces. 2019 Feb 6;11(5):5193-5199. doi: 10.1021/acsami.8b14328. Epub 2019 Jan 25.

PMID:
30624890
3.

Highly Conductive and Transparent AZO Films Fabricated by PLD as Source/Drain Electrodes for TFTs.

Zhang H, Li X, Fang Z, Yao R, Zhang X, Deng Y, Lu X, Tao H, Ning H, Peng J.

Materials (Basel). 2018 Dec 6;11(12). pii: E2480. doi: 10.3390/ma11122480.

4.

Effects of Annealing Temperature on Optical Band Gap of Sol-gel Tungsten Trioxide Films.

Zhang G, Lu K, Zhang X, Yuan W, Shi M, Ning H, Tao R, Liu X, Yao R, Peng J.

Micromachines (Basel). 2018 Jul 30;9(8). pii: E377. doi: 10.3390/mi9080377.

5.

Capillary force induced air film for self-aligned short channel: pushing the limits of inkjet printing.

Tao R, Fang Z, Zhang J, Ning H, Chen J, Yang C, Zhou Y, Yao R, Song Y, Peng J.

Soft Matter. 2018 Nov 28;14(46):9402-9410. doi: 10.1039/c8sm01984c.

PMID:
30421779
6.

Zigzag Hollow Cracks of Silver Nanoparticle Film Regulated by Its Drying Micro-environment.

Tao R, Zhang J, Fang Z, Ning H, Chen J, Yang C, Zhou Y, Yao R, Song Y, Peng J.

Nanoscale Res Lett. 2018 Nov 6;13(1):354. doi: 10.1186/s11671-018-2777-x.

7.

High-Performance Thin Film Transistor with an Neodymium-Doped Indium Zinc Oxide/Al₂O₃ Nanolaminate Structure Processed at Room Temperature.

Yao R, Li X, Zheng Z, Zhang X, Xiong M, Xiao S, Ning H, Wang X, Wu Y, Peng J.

Materials (Basel). 2018 Oct 1;11(10). pii: E1871. doi: 10.3390/ma11101871.

8.

Enhancement of Electrical Characteristics and Stability of Amorphous Si-Sn-O Thin Film Transistors with SiOx Passivation Layer.

Liu X, Wu W, Chen W, Ning H, Zhang X, Yuan W, Xiong M, Wang X, Yao R, Peng J.

Materials (Basel). 2018 Aug 15;11(8). pii: E1440. doi: 10.3390/ma11081440.

9.

Critical Impact of Solvent Evaporation on the Resolution of Inkjet Printed Nanoparticles Film.

Tao R, Fang Z, Zhang J, Ning H, Chen J, Yang C, Zhou Y, Yao R, Lin W, Peng J.

ACS Appl Mater Interfaces. 2018 Jul 11;10(27):22883-22888. doi: 10.1021/acsami.8b06519. Epub 2018 Jun 26.

PMID:
29939008
10.

Morphology Modulation of Direct Inkjet Printing by Incorporating Polymers and Surfactants into a Sol-Gel Ink System.

Zhu Z, Ning H, Cai W, Wei J, Zhou S, Yao R, Lu X, Zhang J, Zhou Z, Peng J.

Langmuir. 2018 Jun 5;34(22):6413-6419. doi: 10.1021/acs.langmuir.8b00745. Epub 2018 May 24.

PMID:
29750535
11.

Effect of Source/Drain Electrodes on the Electrical Properties of Silicon⁻Tin Oxide Thin-Film Transistors.

Liu X, Ning H, Chen W, Fang Z, Yao R, Wang X, Deng Y, Yuan W, Wu W, Peng J.

Nanomaterials (Basel). 2018 May 2;8(5). pii: E293. doi: 10.3390/nano8050293.

12.

Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes.

Hu S, Ning H, Lu K, Fang Z, Li Y, Yao R, Xu M, Wang L, Peng J, Lu X.

Nanomaterials (Basel). 2018 Mar 27;8(4). pii: E197. doi: 10.3390/nano8040197.

13.

Induced nano-scale self-formed metal-oxide interlayer in amorphous silicon tin oxide thin film transistors.

Liu X, Xu H, Ning H, Lu K, Zhang H, Zhang X, Yao R, Fang Z, Lu X, Peng J.

Sci Rep. 2018 Mar 7;8(1):4160. doi: 10.1038/s41598-018-22602-4.

14.

Properties-Adjustable Alumina-Zirconia Nanolaminate Dielectric Fabricated by Spin-Coating.

Peng J, Wei J, Zhu Z, Ning H, Cai W, Lu K, Yao R, Tao H, Zheng Y, Lu X.

Nanomaterials (Basel). 2017 Nov 29;7(12). pii: E419. doi: 10.3390/nano7120419.

15.

UV-Cured Inkjet-Printed Silver Gate Electrode with Low Electrical Resistivity.

Ning H, Zhou Y, Fang Z, Yao R, Tao R, Chen J, Cai W, Zhu Z, Yang C, Wei J, Wang L, Peng J.

Nanoscale Res Lett. 2017 Sep 25;12(1):546. doi: 10.1186/s11671-017-2300-9.

16.

A Simple Method for High-Performance, Solution-Processed, Amorphous ZrO₂ Gate Insulator TFT with a High Concentration Precursor.

Cai W, Zhu Z, Wei J, Fang Z, Ning H, Zheng Z, Zhou S, Yao R, Peng J, Lu X.

Materials (Basel). 2017 Aug 21;10(8). pii: E972. doi: 10.3390/ma10080972.

17.

Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs.

Hu S, Fang Z, Ning H, Tao R, Liu X, Zeng Y, Yao R, Huang F, Li Z, Xu M, Wang L, Lan L, Peng J.

Materials (Basel). 2016 Jul 27;9(8). pii: E623. doi: 10.3390/ma9080623.

18.

All-Aluminum Thin Film Transistor Fabrication at Room Temperature.

Yao R, Zheng Z, Zeng Y, Liu X, Ning H, Hu S, Tao R, Chen J, Cai W, Xu M, Wang L, Lan L, Peng J.

Materials (Basel). 2017 Feb 23;10(3). pii: E222. doi: 10.3390/ma10030222.

19.

Direct Inkjet Printing of Silver Source/Drain Electrodes on an Amorphous InGaZnO Layer for Thin-Film Transistors.

Ning H, Chen J, Fang Z, Tao R, Cai W, Yao R, Hu S, Zhu Z, Zhou Y, Yang C, Peng J.

Materials (Basel). 2017 Jan 10;10(1). pii: E51. doi: 10.3390/ma10010051.

20.

Effect of Intrinsic Stress on Structural and Optical Properties of Amorphous Si-Doped SnO₂ Thin-Film.

Ning H, Liu X, Zhang H, Fang Z, Cai W, Chen J, Yao R, Xu M, Wang L, Lan L, Peng J, Wang X, Zhang Z.

Materials (Basel). 2017 Jan 1;10(1). pii: E24. doi: 10.3390/ma10010024.

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