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Items: 8

1.

UVA light-emitting diode grown on Si substrate with enhanced electron and hole injections.

Zhang ZH, Chu C, Chiu CH, Lu TC, Li L, Zhang Y, Tian K, Fang M, Sun Q, Kuo HC, Bi W.

Opt Lett. 2017 Nov 1;42(21):4533-4536. doi: 10.1364/OL.42.004533.

PMID:
29088206
2.

Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots.

Lin TN, Santiago SRM, Yuan CT, Chiu KP, Shen JL, Wang TC, Kuo HC, Chiu CH, Yao YC, Lee YJ.

Sci Rep. 2017 Aug 2;7(1):7108. doi: 10.1038/s41598-017-07483-3.

3.

Enhanced power conversion efficiency in InGaN-based solar cells via graded composition multiple quantum wells.

Tsai YL, Wang SW, Huang JK, Hsu LH, Chiu CH, Lee PT, Yu P, Lin CC, Kuo HC.

Opt Express. 2015 Nov 30;23(24):A1434-41. doi: 10.1364/OE.23.0A1434.

PMID:
26698792
4.

The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes.

Tsai MT, Chu CM, Huang CH, Wu YH, Chiu CH, Li ZY, Tu PM, Lee WI, Kuo HC.

Nanoscale Res Lett. 2014 Dec;9(1):2418. doi: 10.1186/1556-276X-9-675. Epub 2014 Dec 13.

5.

Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate.

Lee CY, Tzou AJ, Lin BC, Lan YP, Chiu CH, Chi GC, Chen CH, Kuo HC, Lin RM, Chang CY.

Nanoscale Res Lett. 2014 Sep 16;9(1):505. doi: 10.1186/1556-276X-9-505. eCollection 2014.

6.

Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer.

Lin BC, Chen KJ, Wang CH, Chiu CH, Lan YP, Lin CC, Lee PT, Shih MH, Kuo YK, Kuo HC.

Opt Express. 2014 Jan 13;22(1):463-9. doi: 10.1364/OE.22.000463.

PMID:
24515006
7.

Effect of the surface-plasmon-exciton coupling and charge transfer process on the photoluminescence of metal-semiconductor nanostructures.

Yin J, Yue C, Zang Y, Chiu CH, Li J, Kuo HC, Wu Z, Li J, Fang Y, Chen C.

Nanoscale. 2013 May 21;5(10):4436-42. doi: 10.1039/c3nr00920c.

PMID:
23579445
8.

High efficiency GaN-based light-emitting diodes with embedded air voids/SiO2 nanomasks.

Chiu CH, Lin CC, Han HV, Liu CY, Chen YH, Lan YP, Yu P, Kuo HC, Lu TC, Wang SC, Chang CY.

Nanotechnology. 2012 Feb 3;23(4):045303. doi: 10.1088/0957-4484/23/4/045303. Epub 2012 Jan 6.

PMID:
22222308

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