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Angew Chem Int Ed Engl. 2019 Feb 11;58(7):2069-2072. doi: 10.1002/anie.201813340. Epub 2019 Jan 18.

Broadband Cr3+ , Sn4+ -Doped Oxide Nanophosphors for Infrared Mini Light-Emitting Diodes.

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Department of Chemistry, National (Taiwan) University, Taipei, 106, Taiwan.
Everlight Electronics Co., Ltd., New Taipei City, 238, Taiwan.
Department of Mechanical Engineering and Graduate Institute of Manufacturing Technology, National Taipei University of Technology, Taipei, 106, Taiwan.


Light-emitting diodes break barriers of size and performance for displays. With devices becoming smaller, the materials also need to get smaller. Chromium(III)-doped oxide phosphors, which emit near-infrared (NIR) light, have recently been used in small electronic devices. In this work, mesoporous silica nanoparticles were used as nanocarriers. The nanophosphor ZnGa2 O4 :Cr3+ ,Sn4+ formed in the mesopore after sintering. Good dispersity and morphology were performed with average diameters of 71±7 nm. It emitted light at 600-850 nm; the intensity was optimized by tuning the doping ratio of Cr3+ and Sn4+ . Meanwhile, the light conversion efficiency increased from 7.8 % to 37 % and the molar concentration increased from 0.125 m to 0.5 m. The higher radiant flux of 3.3 mW was obtained by operating an input current of 45 mA. However, the NIR nanophosphor showed good performance on mini light-emitting diode chips.


light emitting diodes; mesoporous structures; nanophosphors; near infrared; silica nanoparticles


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