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Items: 3

1.

Correction: A high quality liquid-type quantum dot white light-emitting diode.

Sher CW, Lin CH, Lin HY, Lin CC, Huang CH, Chen KJ, Li JR, Wang KY, Tu HH, Fu CC, Kuo HC.

Nanoscale. 2018 Mar 29;10(13):6214. doi: 10.1039/c8nr90065e.

PMID:
29595205
2.

A high quality liquid-type quantum dot white light-emitting diode.

Sher CW, Lin CH, Lin HY, Lin CC, Huang CH, Chen KJ, Li JR, Wang KY, Tu HH, Fu CC, Kuo HC.

Nanoscale. 2016 Jan 14;8(2):1117-22. doi: 10.1039/c5nr05676d. Erratum in: Nanoscale. 2018 Mar 29;10 (13):6214.

PMID:
26666455
3.

The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes.

Tsai MT, Chu CM, Huang CH, Wu YH, Chiu CH, Li ZY, Tu PM, Lee WI, Kuo HC.

Nanoscale Res Lett. 2014 Dec;9(1):2418. doi: 10.1186/1556-276X-9-675. Epub 2014 Dec 13.

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