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Sci Rep. 2018 Jul 11;8(1):10472. doi: 10.1038/s41598-018-28788-x.

Silver oxide decomposition mediated direct bonding of silicon-based materials.

Author information

1
Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan. t-matsu@mapse.eng.osaka-u.ac.jp.
2
Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan.

Abstract

Silicon-based materials are widely promising electronic components by the combination with metals in power electronics field. However, bonding metal and silicon-based materials generally requires specific surface modification due to their different chemical bonds. Here, we demonstrate a process for directly bonding metals to silicon-based materials that does not require surface treatment, based on the in situ decomposition of Ag2O paste, forming Ag nanoparticles (AgNPs). We demonstrate sound joints of Ag/silicon-based materials at 300-500 °C with the formation of a silicon oxide interlayer containing AgNPs. We propose that Ag in the interlayer attracted other Ag particles to the interface, playing a unique role in this direct bonding process. This process is suitable for various bonding applications in electronics, as well the fabrication of conducting paths for photovoltaic and other applications.

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