Bipolar resistive switching of Pt/Ga2O3-x/SiC/Pt thin film with ultrahigh OFF/ON resistance ratios

Xia Shen; Longlong Zhang; Lijuan Liu; Yuehua An; Zhensen Gao; Pengfei Guo

doi:10.1088/1361-6528/ab758d

Bipolar resistive switching of Pt/Ga₂O_3-x/SiC/Pt thin film with ultrahigh OFF/ON resistance ratios

Nanotechnology. 2020 May 29;31(22):225206. doi: 10.1088/1361-6528/ab758d. Epub 2020 Feb 12.

Authors

Xia Shen¹, Longlong Zhang, Lijuan Liu, Yuehua An, Zhensen Gao, Pengfei Guo

Affiliation

¹ College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024, People's Republic of China.

PMID: 32050184
DOI: 10.1088/1361-6528/ab758d

Abstract

A multiple-layer thin film of Pt/Ga₂O_3-x/SiC/Pt-based resistive switching is systematically investigated. Excellent bipolar resistive switching behavior is observed with a high resistance switching ratio of OFF/ON up to 10³. The current-voltage relations plot implies the Ohmic conductance of the ON state, while the space and interface charge limited the current of the OFF state. The micro mechanism of resistive switching is explained by the formation/rupture of conductive filaments formed out of oxygen vacancies within the Ga₂O_3-x and SiC region. In particular, these devices exhibit excellent stability. The high OFF/ON resistance ratio can be completely retained for a number of days without degradation.