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Nanoscale Res Lett. 2020 Jan 31;15(1):30. doi: 10.1186/s11671-020-3249-7.

Analog Switching and Artificial Synaptic Behavior of Ag/SiOx:Ag/TiOx/p++-Si Memristor Device.

Author information

1
School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China.
2
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China.
3
School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China. wli@uestc.edu.cn.
4
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China. wli@uestc.edu.cn.

Abstract

In this study, by inserting a buffer layer of TiOx between the SiOx:Ag layer and the bottom electrode, we have developed a memristor device with a simple structure of Ag/SiOx:Ag/TiOx/p++-Si by a physical vapor deposition process, in which the filament growth and rupture can be efficiently controlled during analog switching. The synaptic characteristics of the memristor device with a wide range of resistance change for weight modulation by implementing positive or negative pulse trains have been investigated extensively. Several learning and memory functions have been achieved simultaneously, including potentiation/depression, paired-pulse-facilitation (PPF), short-term plasticity (STP), and STP-to-LTP (long-term plasticity) transition controlled by repeating pulses more than a rehearsal operation, and spike-time-dependent-plasticity (STDP) as well. Based on the analysis of logarithmic I-V characteristics, it has been found that the controlled evolution/dissolution of conductive Ag-filaments across the dielectric layers can improve the performance of the testing memristor device.

KEYWORDS:

Ag-filament; Ag/SiOx:Ag/TiOx/p++-Si memristor; Analog switching; Synaptic characteristics

PMID:
32006131
DOI:
10.1186/s11671-020-3249-7

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