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Adv Mater. 2019 Sep 18:e1903498. doi: 10.1002/adma.201903498. [Epub ahead of print]

Strong and Tunable Electrical Anisotropy in Type-II Weyl Semimetal Candidate WP2 with Broken Inversion Symmetry.

Su B1,2, Song Y1,2, Hou Y1,3, Chen X1,2, Zhao J4, Ma Y3, Yang Y1,5, Guo J1,2,5, Luo J1,5,6, Chen ZG1,2,5.

Author information

1
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
2
School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China.
3
School of Materials Science and Engineering, Tianjin University of Technology, Tianjin, 300384, China.
4
Co-Innovation Center for New Energetic Materials, Southwest University of Science and Technology, Mianyang, Sichuan, 621010, China.
5
Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China.
6
Collaborative Innovation Center of Quantum Matter, Beijing, China.

Abstract

A transition metal diphosphide, WP2 , is a candidate for type-II Weyl semimetals (WSMs) in which spatial inversion symmetry is broken and Lorentz invariance is violated. As one of the prerequisites for the presence of the WSM state in WP2 , spatial inversion symmetry breaking in this compound has rarely been investigated. Furthermore, the anisotropy of the WP2 electrical properties and whether its electrical anisotropy can be tuned remain elusive. Angle-resolved polarized Raman spectroscopy, electrical transport, optical spectroscopy, and first-principle studies of WP2 are reported. The energies of the observed Raman-active phonons and the angle dependences of the detected phonon intensities are consistent with results obtained by first-principle calculations and analysis of the proposed crystal symmetry without spatial inversion, showing that spatial inversion symmetry is broken in WP2 . Moreover, the measured ratio (Rc /Ra ) between the crystalline c-axis and a-axis electrical resistivities exhibits a weak dependence on temperature (T) in the temperature range from 100 to 250 K, but increases abruptly at T ≤ 100 K, and then reaches the value of ≈8.0 at T = 10 K, which is by far the strongest in-plane electrical resistivity anisotropy among the reported type-II WSM candidates with comparable carrier concentrations. Optical spectroscopy study, together with the first-principle calculations on the electronic band structure, reveals that the abrupt enhancement of the electrical resistivity anisotropy at T ≤ 100 K mainly arises from a sharp increase in the scattering rate anisotropy at low temperatures. More interestingly, the Rc /Ra of WP2 at T = 10 K can be tuned from 8.0 to 10.6 as the magnetic field increases from 0 to 9 T. The so-far-strongest and magnetic-field-tunable electrical resistivity anisotropy found in WP2 can serve as a degree of freedom for tuning the electrical properties of type-II WSMs, which paves the way for the development of novel electronic applications based on type-II WSMs.

KEYWORDS:

Raman spectroscopy; first-principle calculations; in-plane electrical anisotropy; optical spectroscopy; type-II Weyl semimetal

PMID:
31531912
DOI:
10.1002/adma.201903498

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