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Nanoscale. 2019 Jul 7;11(25):12337-12346. doi: 10.1039/c9nr02248a. Epub 2019 Jun 19.

A new etching process for zinc oxide with etching rate and crystal plane control: experiment, calculation, and membrane application.

Author information

1
Department of Chemical Engineering, College of Engineering, Kyung Hee University, Yongin 17140, Korea. jkim21@khu.ac.kr tkyu@khu.ac.kr.
2
Department of KHU-KIST Converging Science and Technology, Kyung Hee University, Seoul 02447, Korea and Fuel Cell Research Center, Korea Institute of Science and Technology, Seoul 02792, Korea.
3
Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk 37673, Korea. jwhan@postech.ac.kr.
4
Department of KHU-KIST Converging Science and Technology, Kyung Hee University, Seoul 02447, Korea and Fuel Cell Research Center, Korea Institute of Science and Technology, Seoul 02792, Korea and Division of Energy & Environment Technology, KIST School, University of Science and Technology (UST), Seoul 02792, Korea.

Abstract

The etching process can be a useful method for the morphology control of nanostructures. Using precise experiments and theoretical calculations, we report a new ZnO etching process triggered by the reaction of ZnO with transition metal cations and demonstrate that the etching rate and direction could be controlled by varying the kind of transition metal cation. In addition, the developed etching process was introduced to form a thin and uniform ZnO layer, which was utilized for the fabrication of an improved propylene-selective ZIF-8 membrane via conversion seeding and secondary growth.

PMID:
31215578
DOI:
10.1039/c9nr02248a

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