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Adv Mater. 2019 Jun 14:e1901578. doi: 10.1002/adma.201901578. [Epub ahead of print]

Molecular Beam Epitaxy Scalable Growth of Wafer-Scale Continuous Semiconducting Monolayer MoTe2 on Inert Amorphous Dielectrics.

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State Centre for International Cooperation on Designer Low-Carbon and Environmental Materials, School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450001, P. R. China.
Process Research R&D Array Technology Department, Visionox Technology Co., Ltd., Gu'an New Industry Park, Langfang, 065500, P. R. China.
Institutes for Renewable Energy and Environmental Technologies, University of Bolton, Bolton, BL3 5AB, UK.
Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China.
Analytical & Testing Center, Sichuan University, Chengdu, 610064, P. R. China.


Monolayer MoTe2 , with the narrowest direct bandgap of ≈1.1 eV among Mo- and W-based transition metal dichalcogenides, has attracted increasing attention as a promising candidate for applications in novel near-infrared electronics and optoelectronics. Realizing 2D lateral growth is an essential prerequisite for uniform thickness and property control over the large scale, while it is not successful yet. Here, layer-by-layer growth of 2 in. wafer-scale continuous monolayer 2H-MoTe2 films on inert SiO2 dielectrics by molecular beam epitaxy is reported. A single-step Mo-flux controlled nucleation and growth process is developed to suppress island growth. Atomically flat 2H-MoTe2 with 100% monolayer coverage is successfully grown on inert 2 in. SiO2 /Si wafer, which exhibits highly uniform in-plane structural continuity and excellent phonon-limited carrier transport behavior. The dynamics-controlled growth recipe is also extended to fabricate continuous monolayer 2H-MoTe2 on atomic-layer-deposited Al2 O3 dielectric. With the breakthrough in growth of wafer-scale continuous 2H-MoTe2 monolayers on device compatible dielectrics, batch fabrication of high-mobility monolayer 2H-MoTe2 field-effect transistors and the three-level integration of vertically stacked monolayer 2H-MoTe2 transistor arrays for 3D circuitry are successfully demonstrated. This work provides novel insights into the scalable synthesis of monolayer 2H-MoTe2 films on universal substrates and paves the way for the ultimate miniaturization of electronics.


layer-by-layer growth; molecular beam epitaxy; monolayer MoTe2; monolithic integration; phonon scattering


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