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ACS Nano. 2019 Jun 25;13(6):7323-7332. doi: 10.1021/acsnano.9b03699. Epub 2019 Jun 11.

Charge Transport in Mixed Semiconducting Carbon Nanotube Networks with Tailored Mixing Ratios.

Author information

1
Institute for Physical Chemistry , Universität Heidelberg , D-69120 Heidelberg , Germany.
2
Centre for Advanced Materials , Universität Heidelberg , D-69120 Heidelberg , Germany.

Abstract

The ability to prepare uniform and dense networks of purely semiconducting single-walled carbon nanotubes (SWNTs) has enabled the design of various (opto-)electronic devices, especially field-effect transistors (FETs) with high carrier mobilities. Further optimization of these SWNT networks is desired to surpass established solution-processable semiconductors. The average diameter and diameter distribution of nanotubes in a dense network were found to influence the overall charge carrier mobility; e.g., networks with a broad range of SWNT diameters show inferior transport properties. Here, we investigate charge transport in FETs with nanotube networks comprising polymer-sorted small diameter (6,5) SWNTs (0.76 nm) and large diameter plasma torch SWNTs (1.17-1.55 nm) in defined mixing ratios. All transistors show balanced ambipolar transport with high on/off current ratios and negligible hysteresis. While the range of bandgaps in these networks creates a highly uneven energy landscape for charge carrier hopping, the extracted hole and electron mobilities vary nonlinearly with the network composition from the lowest mobility (15 cm2 V-1 s-1) for only (6,5) SWNT to the highest mobility (30 cm2 V-1 s-1) for only plasma torch SWNTs. A comparison to numerically simulated network mobilities shows that a superposition of thermally activated hopping across SWNT-SWNT junctions and diameter-dependent intratube transport is required to reproduce the experimental data. These results also emphasize the need for monochiral large diameter nanotubes for maximum carrier mobilities in random networks.

KEYWORDS:

charge transport; field-effect transistors; network; polymer-wrapping; random resistor network model; single-walled carbon nanotubes

PMID:
31184852
DOI:
10.1021/acsnano.9b03699

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