Enhanced two-photon absorption and two-photon luminescence in monolayer MoS2 and WS2 by defect repairing

Xuran Dai; Xiaoyan Zhang; Ivan M Kislyakov; Lei Wang; Jiawei Huang; Saifeng Zhang; Ningning Dong; Jun Wang

doi:10.1364/OE.27.013744

Enhanced two-photon absorption and two-photon luminescence in monolayer MoS₂ and WS₂ by defect repairing

Opt Express. 2019 May 13;27(10):13744-13753. doi: 10.1364/OE.27.013744.

Authors

Xuran Dai, Xiaoyan Zhang, Ivan M Kislyakov, Lei Wang, Jiawei Huang, Saifeng Zhang, Ningning Dong, Jun Wang

PMID: 31163833
DOI: 10.1364/OE.27.013744

Abstract

In this work, we investigated the nonlinear optical properties of monolayer MoS₂ and WS₂ modulated by defect engineering via chemical treatment. The results demonstrate that the two-photon luminescence (TPL) and two-photon absorption (TPA) coefficient were remarkably improved after the repair of sulfur vacancies for both monolayer MoS₂ and WS₂. After the chemical treatment, the nonradiative relaxation path dominant in pristine monolayer MoS₂ is significantly alleviated, resulting in enhanced TPL. Our work affords an effective way to tailor the nonlinear absorption, luminescence and relaxation properties of sulfur-based two-dimensional metal dichalcogenides by defect engineering.