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ACS Appl Mater Interfaces. 2019 May 22;11(20):18511-18516. doi: 10.1021/acsami.9b01747. Epub 2019 May 10.

Synthesis of Superlattice InSe Nanosheets with Enhanced Electronic and Optoelectronic Performance.

Author information

1
Key Lab of Microsystem and Microstructure of Ministry of Education , Harbin Institute of Technology , Harbin , 150080 , China.
2
Institute for Frontier Materials , Deakin University , 75 Pigdons Road, Waurn Ponds , Geelong , Victoria 3216 , Australia.

Abstract

Multilayer InSe has emerged as a promising candidate for applications in novel electronic and optoelectronic devices due to its direct bandgap, high electron mobility, and excellent photoresponse with a broad response range. Here, we report synthesis of superlattice InSe nanosheets by simple thermal annealing for the first time. The mobility is increased to 299.1 cm2 V-1 s-1 for superlattice InSe FETs and is 4 times higher than 63.5 cm2 V-1 s-1 of pristine InSe device. The superlattice InSe photodetector shows an ultrahigh responsivity of 1.7 × 104 A/W (700 nm), which is 8.5 times greater than the pristine photodetector. Superlattice InSe photodetectors hold a good photoresponse stability and rapid response time of 20 ms. The electronic and photoresponse performance improvement of superlattice InSe is attributed to higher carrier sheet density and lower contact resistance for more effective electron injection and more photogenerated carrier injection, respectively. Those results suggest that superlattice is an effective method to further improve electronic and optoelectronic properties of two-dimensional InSe devices.

KEYWORDS:

InSe; field-effect transistors; photodetectors; superlattice; thermal-annealing

PMID:
31059223
DOI:
10.1021/acsami.9b01747

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