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J Nanosci Nanotechnol. 2019 Oct 1;19(10):6727-6731. doi: 10.1166/jnn.2019.17112.

Behavior Modeling for Charge Storage in Single-Poly Floating Gate Device.

Author information

1
College of Information & Communication Engineering, Sungkyunkwan University, Suwon, 16419, Korea.

Abstract

Single-poly floating gate is an efficient device for charge storage due to low power program, and implemented in a standard CMOS process. In floating gate, charges are injected and removed through the thin gate oxide. Among the gate leakage current mechanisms, FN tunneling is significant in the high electric field, while PF emission in the low electric field. We extracted FN and PF components from the measured current and built an accurate model which include fringing field effect induced by the 3-dimensional structure. This model helps engineers reflect exact behaviors of charge storage device in their circuit design.

PMID:
31027018
DOI:
10.1166/jnn.2019.17112

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