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Nat Commun. 2019 Mar 13;10(1):1188. doi: 10.1038/s41467-019-09016-0.

Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation.

Liu D1,2, Chen X1,2, Yan Y3,4, Zhang Z3,4, Jin Z1,2, Yi K1,2, Zhang C1,2, Zheng Y5, Wang Y6, Yang J7, Xu X8,9, Chen J3,4, Lu Y6, Wei D10, Wee ATS5, Wei D11,12.

Author information

1
State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, China.
2
Department of Macromolecular Science, Fudan University, Shanghai, 200433, China.
3
Center for Phononics and Thermal Energy Science, School of Physics Science and Engineering, and Institute for Advanced Study, Tongji University, Shanghai, 200092, China.
4
China-EU Joint Lab for Nanophononics, Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China.
5
Department of Physics, National University of Singapore, Singapore, 117542, Singapore.
6
International Center for New-Structured Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
7
Key Laboratory of Multi-scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, 400714, China.
8
Center for Phononics and Thermal Energy Science, School of Physics Science and Engineering, and Institute for Advanced Study, Tongji University, Shanghai, 200092, China. xuxiangfan@tongji.edu.cn.
9
China-EU Joint Lab for Nanophononics, Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China. xuxiangfan@tongji.edu.cn.
10
Key Laboratory of Multi-scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, 400714, China. dpwei@cigit.ac.cn.
11
State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, China. weidc@fudan.edu.cn.
12
Department of Macromolecular Science, Fudan University, Shanghai, 200433, China. weidc@fudan.edu.cn.

Abstract

Relatively low mobility and thermal conductance create challenges for application of tungsten diselenide (WSe2) in high performance devices. Dielectric interface is of extremely importance for improving carrier transport and heat spreading in a semiconductor device. Here, by near-equilibrium plasma-enhanced chemical vapour deposition, we realize catalyst-free growth of poly-crystalline two-dimensional hexagonal-boron nitride (2D-BN) with domains around 20~ 200 nm directly on SiO2/Si, quartz, sapphire, silicon or SiO2/Si with three-dimensional patterns at 300 °C. Owing to the atomically-clean van-der-Walls conformal interface and the fact that 2D-BN can better bridge the vibrational spectrum across the interface and protect interfacial heat conduction against substrate roughness, both improved performance and thermal dissipation of WSe2 field-effect transistor are realized with mobility around 56~ 121 cm2 V-1 s-1 and saturated power intensity up to 4.23 × 103 W cm-2. Owing to its simplicity, conformal growth on three-dimensional surface, compatibility with microelectronic process, it has potential for application in future two-dimensional electronics.

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