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Sci Rep. 2019 Mar 11;9(1):4068. doi: 10.1038/s41598-019-40547-0.

High-Electrical-Conductivity Multilayer Graphene Formed by Layer Exchange with Controlled Thickness and Interlayer.

Author information

1
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki, 305-8573, Japan.
2
Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba, 305-8569, Japan.
3
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki, 305-8573, Japan. toko@bk.tsukuba.ac.jp.
4
PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama, 332-0012, Japan. toko@bk.tsukuba.ac.jp.

Abstract

The layer exchange technique enables high-quality multilayer graphene (MLG) on arbitrary substrates, which is a key to combining advanced electronic devices with carbon materials. We synthesize uniform MLG layers of various thicknesses, t, ranging from 5 nm to 200 nm using Ni-induced layer exchange at 800 °C. Raman and transmission electron microscopy studies show the crystal quality of MLG is relatively low for t ≤ 20 nm and dramatically improves for t ≥ 50 nm when we prepare a diffusion controlling Al2O3 interlayer between the C and Ni layers. Hall effect measurements reveal the carrier mobility for t = 50 nm is 550 cm2/Vs, which is the highest Hall mobility in MLG directly formed on an insulator. The electrical conductivity (2700 S/cm) also exceeds a highly oriented pyrolytic graphite synthesized at 3000 °C or higher. Synthesis technology of MLG with a wide range of thicknesses will enable exploration of extensive device applications of carbon materials.

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