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Phys Chem Chem Phys. 2019 Jul 10;21(27):14541-14545. doi: 10.1039/c9cp00834a.

Depth-dependent electronic band structure at the Au/CH3NH3PbI3-xClx junction.

Author information

1
Department of Materials Physics, Dong-A University, Busan, 49315, Republic of Korea. seojh@dau.ac.kr.
2
Department of Chemistry, Kyung Hee University, Seoul, 02447, Republic of Korea. walker@khu.ac.kr.

Abstract

The electronic properties of the interface between Au and organometallic triiodide perovskite (CH3NH3PbI3-xClx) were investigated by ultraviolet photoelectron spectroscopy (UPS) and X-ray photoemission spectroscopy (XPS). CH3NH3PbI3-xClx films were prepared on Au surfaces by spin casting with various concentrations to control the film thickness. Their morphology was examined by atomic force microscopy (AFM). CH3NH3PbI3-xClx films exhibited a maximum valence band edge of 5.91 eV. The energy levels shifted downward by 0.26 eV with a perovskite coverage of 116.3 nm, indicating that band bending occurs at the interface. The observed energy level shift indicates an interface dipole at the Au/CH3NH3PbI3-xClx junction. These findings contribute to the understanding of how perovskite materials function in electronic devices and aid in the design of new perovskite materials.

PMID:
30855628
DOI:
10.1039/c9cp00834a

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