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ACS Appl Mater Interfaces. 2019 Apr 3;11(13):12777-12785. doi: 10.1021/acsami.9b00306. Epub 2019 Mar 21.

Low Contact Barrier in 2H/1T' MoTe2 In-Plane Heterostructure Synthesized by Chemical Vapor Deposition.

Author information

1
Center for Nanophase Materials Sciences , Oak Ridge National Laboratory , Oak Ridge , Tennessee 37831 , United States.
2
NG Next, Northrop Grumman Corporation , Redondo Beach , California 90278 , United States.
3
Metallurgical and Materials Engineering , Indian Institute of Technology Kharagpur , West Bengal 721301 , India.
4
Interdisciplinary Excellence Centre, Department of Applied and Environmental Chemistry, University of Szeged, Rerrich Béla tér1. , Szeged , Hungary.

Abstract

Metal-semiconductor contact has been a critical topic in the semiconductor industry because it influences device performance remarkably. Conventional metals have served as the major contact material in electronic and optoelectronic devices, but such a selection becomes increasingly inadequate for emerging novel materials such as two-dimensional (2D) materials. Deposited metals on semiconducting 2D channels usually form large resistance contacts due to the high Schottky barrier. A few approaches have been reported to reduce the contact resistance but they are not suitable for large-scale application or they cannot create a clean and sharp interface. In this study, a chemical vapor deposition (CVD) technique is introduced to produce large-area semiconducting 2D material (2H MoTe2) planarly contacted by its metallic phase (1T' MoTe2). We demonstrate the phase-controllable synthesis and systematic characterization of large-area MoTe2 films, including pure 2H phase or 1T' phase, and 2H/1T' in-plane heterostructure. Theoretical simulation shows a lower Schottky barrier in 2H/1T' junction than in Ti/2H contact, which is confirmed by electrical measurement. This one-step CVD method to synthesize large-area, seamless-bonding 2D lateral metal-semiconductor junction can improve the performance of 2D electronic and optoelectronic devices, paving the way for large-scale 2D integrated circuits.

KEYWORDS:

MoTe2; chemical vapor deposition; contact resistance; in-plane heterostructure; metal−semiconductor junction; two-dimensional materials

PMID:
30854848
DOI:
10.1021/acsami.9b00306

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