Send to

Choose Destination
ACS Appl Mater Interfaces. 2019 Feb 20;11(7):7529-7538. doi: 10.1021/acsami.8b18678. Epub 2019 Feb 6.

Morphological Evolution Induced through a Heterojunction of W-Decorated NiO Nanoigloos: Synergistic Effect on High-Performance Gas Sensors.

Author information

Center for Electronic Materials , Korea Institute of Science and Technology (KIST) , Seoul 02791 , Republic of Korea.
Department of Materials Science & Engineering , Korea Advanced Institute of Science and Technology (KAIST) , Daejeon 34141 , Republic of Korea.
Department of Materials Science and Engineering, Research Institute of Advanced Materials , Seoul National University , Seoul 08826 , Republic of Korea.


Morphological evolution accompanying a surface roughening and preferred orientation is an effective way to realize a high-performance gas sensor because of its significant potential as a chemical catalyst through chemical potentials and atomic energy states. In this work, we investigated a heterojunction of double-side-W-decorated NiO nanoigloos fabricated through radio frequency sputtering and a soft-template method. Interestingly, a morphological evolution characterized by a pyramidal rough surface and the preferred orientation of the (111) plane was observed upon decorating the bare NiO nanoigloos with W. The underlying mechanism of the morphological evolution was precisely demonstrated based on the van der Drift competitive growth model originating from the oxygen transport and chemical strain in the lattice. The gas sensing properties of W-decorated NiO show an excellent NO2 response and selectivity when compared to other gases. In addition, high response stability was evaluated under interference gas and humidity conditions. The synergistic effects on the sensing performance were interpreted on the basis of the morphological evolution of W-decorated NiO nanoigloos.


NO2; gas sensor; heterojunction; morphological evolution; nanostructure


Supplemental Content

Full text links

Icon for American Chemical Society
Loading ...
Support Center