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Opt Express. 2018 Dec 24;26(26):33895-33905. doi: 10.1364/OE.26.033895.

Two-photon absorption and non-resonant electronic nonlinearities of layered semiconductor TlGaS2.


The ultrafast nonlinear optical properties of bulk TlGaS2 crystal, a semiconductor with a layered structure, are studied by combining intensity dependent transmission, time-resolved transient absorption, and optical Kerr effect coupled to optical heterodyne detection. TlGaS2 demonstrates obvious two-photon absorption and electronic nonlinearities at 800 nm. The two-photon absorption coefficient and the nonlinear refractive index are determined to be of the order of 10-10 cm/W and 10-14 cm2/W, respectively. Furthermore, both the real and imaginary parts of the complex third-order susceptibility tensor elements are extracted. The large ultrafast optical nonlinearities make TlGaS2 a promising material for application in photonic techniques.


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