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ACS Appl Mater Interfaces. 2019 Jan 30;11(4):4278-4287. doi: 10.1021/acsami.8b19836. Epub 2019 Jan 17.

Ultrathin GeSe Nanosheets: From Systematic Synthesis to Studies of Carrier Dynamics and Applications for a High-Performance UV-Vis Photodetector.

Author information

1
Faculty of Information Technology , Macau University of Science and Technology , Taipa , Macau SAR 999078 , P. R. China.
2
Collaborative Innovation Center for Optoelectronic Science and Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province , Shenzhen University , Shenzhen 518060 , P. R. China.
3
Department of Electronic Engineering , Xiamen University , Xiamen 361005 , P. R. China.

Abstract

Owing to the attractive energy band properties, a black phosphorus (BP)-analogue semiconductor, germanium selenide (GeSe), shows a promising potential applied for optoelectronic devices. Herein, ultrathin GeSe nanosheets were systematically prepared via a facile liquid-phase exfoliation approach, with controllable nanoscale thickness. Different from BP, ultrathin GeSe nanosheets exhibit good stability under both liquid and ambient conditions. Besides, its ultrafast carrier dynamics was probed by transient absorption spectroscopy. We showed that the GeSe nanosheet-based photodetector exhibits excellent photoresponse behaviors ranging from ultraviolet (UV) to the visible regime, with high responsivity and low dark current. Furthermore, the detective ability of such a device can be effectively modulated by varying the applied bias potential, light intensity, and concentration of the electrolyte. Generally, our present contribution could not only supply fundamental knowledge of a GeSe nanosheet-based photoelectrochemical (PEC)-type device, but also offer guidance to extend other possible semiconductor materials in the application of the PEC-type photodetector.

KEYWORDS:

GeSe nanosheets; carrier dynamics; liquid-phase exfoliation; photodetector; photoelectrochemical

PMID:
30623664
DOI:
10.1021/acsami.8b19836

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