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ACS Appl Mater Interfaces. 2019 Jan 30;11(4):4226-4232. doi: 10.1021/acsami.8b17869. Epub 2019 Jan 16.

Low-Voltage-Operated Highly Sensitive Graphene Hall Elements by Ionic Gating.

Author information

1
Department of Energy Science , Sungkyunkwan University , Suwon 16419 , Republic of Korea.
2
Center for Integrated Nanostructure Physics , Institute for Basic Science (IBS) , Suwon 16419 , Republic of Korea.
3
Department of Applied Physics , Sookmyung Women's University , Seoul 04310 , Republic of Korea.

Abstract

The advanced Hall magnetic sensor using an ion-gated graphene field-effect transistor demonstrates a high current-normalized sensitivity larger than 3000 V/AT and low operation voltages smaller than 0.5 V. From commercially available graphene-on-SiO2 wafers, large-area arrays of ion-gated graphene Hall element (ig-GHE) samples are prepared through complementary metal-oxide-semiconductor-compatible fabrication processes except the final addition of ionic liquid electrolyte covering the exposed graphene channel and the separate gate-electrode area. The enhanced carrier tunability by ionic gating enables this ig-GHE device to be extremely sensitive to magnetic fields in low-voltage-operation regimes. Further electrical characterization indicates that the operation window is limited by the nonuniform carrier concentration over the channel under high bias conditions. The drain-current-normalized magnetic resolution of the device measured using the low-frequency noise technique is comparable to the previously reported values despite its significant low power consumption.

KEYWORDS:

Hall element array; graphene; ionic gating; low-voltage operation; magnetic Hall sensor

PMID:
30607940
DOI:
10.1021/acsami.8b17869

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