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Nanoscale. 2019 Jan 17;11(3):1360-1369. doi: 10.1039/c8nr07133k.

2D electric-double-layer phototransistor for photoelectronic and spatiotemporal hybrid neuromorphic integration.

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Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, China.


The hardware implementation of neuromorphic computing has attracted growing interest as a promising candidate for confronting the bottleneck of traditional von Neumann computers. However, most previous reports are focusd on emulating the synaptic behaviors by a mono-mode using an electric-driving or photo-driving approach, resulting in a big challenge to synchronously handle the natural photoelectric information. Herein, we report a multifunctional photoelectronic hybrid-integrated synaptic device based on the electric-double-layer (EDL) MoS2 phototransistor. Interestingly, the electric MoS2 synapse exhibits a potentiation filtering effect, while the photonic counterpart can implement both potentiation and depression filtering effects. Most importantly, for the first time, photoelectronic and spatio-temporal four-dimensional (4D) hybrid integration was successfully demonstrated by the synergic interplay between photonic and electric stimuli within a single MoS2 synapse. An energy band model is proposed to further understand such a photoelectronic and spatio-temporal 4D hybrid coupling mechanism. These results might provide an alternative solution for the size-scaling and intellectualization campaign of the post-Moore era, and for more sophisticated photoelectronic hybrid computing in the emerging neuromorphic nanoelectronics.


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