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Nat Mater. 2018 Dec;17(12):1081-1086. doi: 10.1038/s41563-018-0203-5. Epub 2018 Nov 5.

Epitaxial growth of ultraflat stanene with topological band inversion.

Deng J1, Xia B2,3, Ma X1, Chen H1, Shan H1, Zhai X1, Li B1, Zhao A4, Xu Y5,6,7, Duan W2,3,8, Zhang SC9, Wang B10, Hou JG1.

Author information

1
Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei, China.
2
State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, China.
3
Collaborative Innovation Center of Quantum Matter, Beijing, China.
4
Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei, China. adzhao@ustc.edu.cn.
5
State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, China. yongxu@mail.tsinghua.edu.cn.
6
Collaborative Innovation Center of Quantum Matter, Beijing, China. yongxu@mail.tsinghua.edu.cn.
7
RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan. yongxu@mail.tsinghua.edu.cn.
8
Institute for Advanced Study, Tsinghua University, Beijing, China.
9
Stanford Center for Topological Quantum Physics, Stanford University, Stanford, CA, USA.
10
Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei, China. bwang@ustc.edu.cn.

Abstract

Two-dimensional (2D) topological materials, including quantum spin/anomalous Hall insulators, have attracted intense research efforts owing to their promise for applications ranging from low-power electronics and high-performance thermoelectrics to fault-tolerant quantum computation. One key challenge is to fabricate topological materials with a large energy gap for room-temperature use. Stanene-the tin counterpart of graphene-is a promising material candidate distinguished by its tunable topological states and sizeable bandgap. Recent experiments have successfully fabricated stanene, but none of them have yet observed topological states. Here we demonstrate the growth of high-quality stanene on Cu(111) by low-temperature molecular beam epitaxy. Importantly, we discovered an unusually ultraflat stanene showing an in-plane s-p band inversion together with a spin-orbit-coupling-induced topological gap (~0.3 eV) at the Γ point, which represents a foremost group-IV ultraflat graphene-like material displaying topological features in experiment. The finding of ultraflat stanene opens opportunities for exploring two-dimensional topological physics and device applications.

PMID:
30397308
DOI:
10.1038/s41563-018-0203-5

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