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Nature. 2018 Nov;563(7729):94-99. doi: 10.1038/s41586-018-0626-9. Epub 2018 Oct 22.

Gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2.

Deng Y1,2,3, Yu Y1,2,3, Song Y1,2,3, Zhang J4, Wang NZ2,5,6, Sun Z1,2, Yi Y1,2, Wu YZ1,2, Wu S1,2,3, Zhu J4, Wang J1,2, Chen XH2,5,6, Zhang Y7,8,9.

Author information

1
State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, China.
2
Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
3
Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, China.
4
Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong, China.
5
Hefei National Laboratory for Physical Science at Microscale and Department of Physics, University of Science and Technology of China, Hefei, China.
6
Key Laboratory of Strongly Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, China.
7
State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, China. zhyb@fudan.edu.cn.
8
Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China. zhyb@fudan.edu.cn.
9
Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, China. zhyb@fudan.edu.cn.

Abstract

Materials research has driven the development of modern nano-electronic devices. In particular, research in magnetic thin films has revolutionized the development of spintronic devices1,2 because identifying new magnetic materials is key to better device performance and design. Van der Waals crystals retain their chemical stability and structural integrity down to the monolayer and, being atomically thin, are readily tuned by various kinds of gate modulation3,4. Recent experiments have demonstrated that it is possible to obtain two-dimensional ferromagnetic order in insulating Cr2Ge2Te6 (ref. 5) and CrI3 (ref. 6) at low temperatures. Here we develop a device fabrication technique and isolate monolayers from the layered metallic magnet Fe3GeTe2 to study magnetotransport. We find that the itinerant ferromagnetism persists in Fe3GeTe2 down to the monolayer with an out-of-plane magnetocrystalline anisotropy. The ferromagnetic transition temperature, Tc, is suppressed relative to the bulk Tc of 205 kelvin in pristine Fe3GeTe2 thin flakes. An ionic gate, however, raises Tc to room temperature, much higher than the bulk Tc. The gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2 opens up opportunities for potential voltage-controlled magnetoelectronics7-11 based on atomically thin van der Waals crystals.

PMID:
30349002
DOI:
10.1038/s41586-018-0626-9

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