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Small. 2018 Oct 16:e1803465. doi: 10.1002/smll.201803465. [Epub ahead of print]

High-Performance Wafer-Scale MoS2 Transistors toward Practical Application.

Author information

1
State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
2
State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE), Physics Department, Fudan University, Shanghai, 200433, China.
3
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, 500 Yutian Road, Shanghai, 200083, China.
4
Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Department of Chemistry, Fudan University, Shanghai, 200433, China.
5
Shanghai Key Laboratory of Multidimensional Information Processing, Department of Electronic Engineering, East China Normal University, 500 Dongchuan Road, Shanghai, 200241, China.
6
Shenzhen 6 Carbon Technology, Shenzhen, 518106, China.

Abstract

Atomic thin transition-metal dichalcogenides (TMDs) are considered as an emerging platform to build next-generation semiconductor devices. However, to date most devices are still based on exfoliated TMD sheets on a micrometer scale. Here, a novel chemical vapor deposition synthesis strategy by introducing multilayer (ML) MoS2 islands to improve device performance is proposed. A four-probe method is applied to confirm that the contact resistance decreases by one order of magnitude, which can be attributed to a conformal contact by the extra amount of exposed edges from the ML-MoS2 islands. Based on such continuous MoS2 films synthesized on a 2 in. insulating substrate, a top-gated field effect transistor (FET) array is fabricated to explore key metrics such as threshold voltage (V T ) and field effect mobility (μFE ) for hundreds of MoS2 FETs. The statistical results exhibit a surprisingly low variability of these parameters. An average effective μFE of 70 cm2 V-1 s-1 and subthreshold swing of about 150 mV dec-1 are extracted from these MoS2 FETs, which are comparable to the best top-gated MoS2 FETs achieved by mechanical exfoliation. The result is a key step toward scaling 2D-TMDs into functional systems and paves the way for the future development of 2D-TMDs integrated circuits.

KEYWORDS:

2D materials; CVD growth; MoS2; field effect transistors; top gate

PMID:
30328296
DOI:
10.1002/smll.201803465

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