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Nat Commun. 2018 Oct 15;9(1):4267. doi: 10.1038/s41467-018-06399-4.

Energy level tuned indium arsenide colloidal quantum dot films for efficient photovoltaics.

Author information

1
Nanomechanical Systems Research Division, Korea Institute of Machinery and Materials, Daejeon, 34103, Korea.
2
Nanomechanical Systems Research Division, Korea Institute of Machinery and Materials, Daejeon, 34103, Korea. sjeong@kimm.re.kr.
3
Department of Nanomechatronics, Korea University of Science and Technology (UST), Daejeon, 34113, Korea. sjeong@kimm.re.kr.

Abstract

We introduce indium arsenide colloidal quantum dot films for photovoltaic devices, fabricated by two-step surface modification. Native ligands and unwanted oxides on the surface are peeled off followed by passivating with incoming atomic or short ligands. The near-infrared-absorbing n-type indium arsenide colloidal quantum dot films can be tuned in energy-level positions up to 0.4 eV depending on the surface chemistry, and consequently, they boost collection efficiency when used in various emerging solar cells. As an example, we demonstrate p-n junction between n-type indium arsenide and p-type lead sulfide colloidal quantum dot layers, which leads to a favorable electronic band alignment and charge extraction from both colloidal quantum dot layers. A certified power conversion efficiency of 7.92% is achieved without additionally supporting carrier transport layers. This study provides richer materials to explore for high-efficiency emerging photovoltaics and will broaden research interest for various optoelectronic applications using the n-type covalent nanocrystal arrays.

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