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Small. 2018 Nov;14(44):e1803143. doi: 10.1002/smll.201803143. Epub 2018 Oct 3.

Laser Direct Writing of Heteroatom (N and S)-Doped Graphene from a Polybenzimidazole Ink Donor on Polyethylene Terephthalate Polymer and Glass Substrates.

Author information

1
Laser Processing Research Centre, School of Mechanical, Aerospace and Civil Engineering, The University of Manchester, Manchester, M13 9PL, UK.
2
School of Materials, The University of Manchester, Manchester, M13 9PL, UK.

Abstract

In this paper, for the first time, a laser direct writing technique is reported to form S- and N-doped graphene patterns on thin (0.3 mm thickness) polyethylene terephthalate (PET) and glass substrates from a specially formulated organic polybenzimidazole (PBI) ink, without thermally affecting the substrates and without the need for a metallic precursor. Unlike standard graphene ink printing, postcuring at high temperatures is not needed here, thus avoiding potential substrate distortion and damages. A UV laser beam of 355 nm wavelength is used to generate photochemical reactions to break the CS bond (2.8 eV) from dimethyl sulfoxide (DMSO, a component of the PBI ink) and the CN bond (3.14 eV) of PBI and form N- and S-doped graphene on the substrates. The sheet resistance of the laser-induced graphene is as low as 12 Ω sq-1 on PET, matching that of indium-tin oxide (ITO). The laser-written doped graphene shows hydrophilic characteristics, unlike pristine graphene. The S- and N-doped graphene allows the tailoring of bandgaps and thus controlling electrical and chemical properties. The optical transparency of the written graphene is below 10% which could be improved in the future. Potential applications include printing of flexible circuits and sensors, and smart wearables.

KEYWORDS:

PET; graphene; ink; laser direct writing (LDW); nanocrystallization; polymers; sheet resistance

PMID:
30284372
DOI:
10.1002/smll.201803143

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