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Nanotechnology. 2018 Nov 23;29(47):47LT02. doi: 10.1088/1361-6528/aae0bb. Epub 2018 Sep 12.

Transformation of 2D group-III selenides to ultra-thin nitrides: enabling epitaxy on amorphous substrates.

Author information

1
Department of Materials Science & Engineering, Center for 2-Dimensional & Layered Materials, The Pennsylvania State University, University Park, PA 16802, United States of America. 2D Crystal Consortium, Materials Research Institute, The Pennsylvania State University, University Park, PA 16802, United States of America.

Abstract

The experimental realization of two-dimensional (2D) gallium nitride (GaN) has enabled the exploration of 2D nitride materials beyond boron nitride. Here we demonstrate one possible pathway to realizing ultra-thin nitride layers through a two-step process involving the synthesis of naturally layered, group-III chalcogenides (GIIIC) and subsequent annealing in ammonia (ammonolysis) that leads to an atomic-exchange of the chalcogen and nitrogen species in the 2D-GIIICs. The effect of nitridation differs for gallium and indium selenide, where gallium selenide undergoes structural changes and eventual formation of ultra-thin GaN, while indium selenide layers are primarily etched rather than transformed by nitridation. Further investigation of the resulting GaN films indicates that ultra-thin GaN layers grown on silicon dioxide act as effective 'seed layers' for the growth of 3D GaN on amorphous substrates.

PMID:
30207301
DOI:
10.1088/1361-6528/aae0bb

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