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ACS Appl Mater Interfaces. 2018 Sep 26;10(38):32337-32343. doi: 10.1021/acsami.8b10390. Epub 2018 Sep 12.

Enhancement of Switching Characteristic for p-Type Oxide Semiconductors Using Hypochlorous Acid.

Author information

1
School of Electrical and Electronic Engineering , Yonsei University , 50 Yonsei-ro, Seodaemun-gu , Seoul 03722 , Republic of Korea.

Abstract

We explored the effects of hypochlorous acid (HClO) oxidation on p-type oxide semiconductors. HClO generates oxygen radicals (O·) (strong reactive oxygen species) that affect the chemical state of p-type copper oxide (CuO x) thin films by reacting with CuO x. On robust oxidation by HClO, the numbers of Cu-O bonds increased and the numbers of copper vacancies serving as hole carriers decreased. In the modified CuO x thin-film transistors (TFTs), switching was evident. The subthreshold swing was 0.70 V/dec, the on-/off-current ratio was 4.86 × 104, and the field effect mobility was 2.83 × 10-3 cm2/V·s. Pristine CuO x TFTs did not exhibit switching.

KEYWORDS:

copper oxide; copper vacancy; hypochlorous acid; p-type oxide semiconductor; thin-film transistor

PMID:
30157628
DOI:
10.1021/acsami.8b10390

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