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ACS Nano. 2018 Oct 23;12(10):9982-9990. doi: 10.1021/acsnano.8b04265. Epub 2018 Aug 28.

Unveiling Defect-Related Raman Mode of Monolayer WS2 via Tip-Enhanced Resonance Raman Scattering.

Lee C1,2, Jeong BG1, Yun SJ1,2, Lee YH1,2,3, Lee SM4, Jeong MS1,2.

Author information

1
Department of Energy Science , Sungkyunkwan University , Suwon 16419 , Republic of Korea.
2
Center for Integrated Nanostructure Physics (CINAP) , Institute for Basic Science (IBS) , Suwon 16419 , Republic of Korea.
3
Department of Physics , Sungkyunkwan University , Suwon 16419 , Republic of Korea.
4
Korea Research Institute of Standards and Science (KRISS) , Daejeon 34113 , Republic of Korea.

Abstract

Monolayer tungsten disulfide (WS2) has emerged as an active material for optoelectronic devices due to its quantum yield of photoluminescence. Despite the enormous research about physical characteristics of monolayer WS2, the defect-related Raman scattering has been rarely studied. Here, we report the correlation of topography and Raman scattering in monolayer WS2 by using tip-enhanced resonance Raman spectroscopy and reveal defect-related Raman modes denoted as D and D' modes. We found that the sulfur vacancies introduce not only the red-shifted A1g mode but also the D and D' modes by the density functional theory calculations. The observed defect-related Raman modes can be utilized to evaluate the quality of monolayer WS2 and will be helpful to improve the performance of WS2 optoelectronic devices.

KEYWORDS:

defects; sulfur vacancies; tip-enhanced Raman scattering; transition metal dichalcogenides; tungsten disulfide

PMID:
30142265
DOI:
10.1021/acsnano.8b04265

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