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ACS Appl Mater Interfaces. 2018 Aug 8;10(31):26378-26386. doi: 10.1021/acsami.8b07066. Epub 2018 Jul 24.

Novel Conductive Filament Metal-Interlayer-Semiconductor Contact Structure for Ultralow Contact Resistance Achievement.

Author information

1
School of Advanced Materials Science & Engineering , Sungkyunkwan University , Suwon 16419 , Korea.
2
Department of Materials Science and Engineering , University of Texas at Dallas , Richardson , Texas 75080 , United States.

Abstract

In the post-Moore era, it is well-known that contact resistance has been a critical issue in determining the performance of complementary metal-oxide-semiconductor (CMOS) reaching physical limits. Conventional Ohmic contact techniques, however, have hindered rather than helped the development of CMOS technology reaching its limits of scaling. Here, a novel conductive filament metal-interlayer-semiconductor (CF-MIS) contact-which achieves ultralow contact resistance by generating CFs and lowering Schottky barrier height (SBH)-is investigated for potential applications in various nanodevices in lieu of conventional Ohmic contacts. This universal and innovative technique, CF-MIS contact, forming the CFs to provide a quantity of electron paths as well as tuning SBH of semiconductor is first introduced. The proposed CF-MIS contact achieves ultralow specific contact resistivity, exhibiting up to ∼×700 000 reduction compared to that of the conventional metal-semiconductor contact. This study proves the viability of CF-MIS contacts for future Ohmic contact schemes and that they can easily be extended to mainstream electronic nanodevices that suffer from significant contact resistance problems.

KEYWORDS:

III−V semiconductor; conductive filament; fermi-level pinning; metal-induced gap state; metal−interlayer−semiconductor structure; source/drain contact

PMID:
30003786
DOI:
10.1021/acsami.8b07066

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