Send to

Choose Destination
Nano Lett. 2018 Aug 8;18(8):4885-4890. doi: 10.1021/acs.nanolett.8b01552. Epub 2018 Jul 17.

One Million Percent Tunnel Magnetoresistance in a Magnetic van der Waals Heterostructure.

Author information

Institute for Quantum Computing , University of Waterloo , Waterloo , Ontario N2L 3G1 , Canada.
Department of Chemistry , University of Waterloo , Waterloo , Ontario N2L 3G1 , Canada.
Department of Physics and Astronomy , University of Waterloo , Waterloo , Ontario N2L 3G1 , Canada.
Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices , Renmin University of China , Beijing 100872 , China.


We report the observation of a very large negative magnetoresistance effect in a van der Waals tunnel junction incorporating a thin magnetic semiconductor, CrI3, as the active layer. At constant voltage bias, current increases by nearly one million percent upon application of a 2 T field. The effect arises from a change between antiparallel to parallel alignment of spins across the different CrI3 layers. Our results elucidate the nature of the magnetic state in ultrathin CrI3 and present new opportunities for spintronics based on two-dimensional materials.


2D magnetism; chromium triiodide; spin filter; tunnel magnetoresistance

Supplemental Content

Full text links

Icon for American Chemical Society
Loading ...
Support Center