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Nat Nanotechnol. 2018 Jul;13(7):554-559. doi: 10.1038/s41565-018-0186-z. Epub 2018 Jul 2.

Electric-field control of magnetism in a few-layered van der Waals ferromagnetic semiconductor.

Wang Z1,2, Zhang T3,4, Ding M5, Dong B1,2, Li Y3,4, Chen M1,2, Li X1,2, Huang J1,2, Wang H1,2, Zhao X1,2, Li Y1,2, Li D1,2, Jia C5, Sun L6, Guo H7, Ye Y8,9, Sun D1,2, Chen Y10,11, Yang T12,13, Zhang J3,4, Ono S14, Han Z15,16, Zhang Z1,2.

Author information

1
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.
2
School of Material Science and Engineering, University of Science and Technology of China, Anhui, China.
3
State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan, China.
4
Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, China.
5
College of Materials Science and Engineering, Changsha University of Science & Technology, Changsha, China.
6
State Key Laboratory of Mechanical Transmission, School of Materials Science and Engineering, Chongqing University, Chongqing, China.
7
College of Sciences, Liaoning Shihua University, Fushun, China.
8
State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing, China.
9
Collaborative Innovation Center of Quantum Matter, Beijing, China.
10
State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan, China. yuansen.chen@sxu.edu.cn.
11
Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, China. yuansen.chen@sxu.edu.cn.
12
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China. yangteng@imr.ac.cn.
13
School of Material Science and Engineering, University of Science and Technology of China, Anhui, China. yangteng@imr.ac.cn.
14
Central Research Institute of Electric Power Industry (CRIEPI), Materials Science Research Laboratory, Yokosuka, Kanagawa, Japan.
15
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China. hanzheng@imr.ac.cn.
16
School of Material Science and Engineering, University of Science and Technology of China, Anhui, China. hanzheng@imr.ac.cn.

Abstract

Manipulating a quantum state via electrostatic gating has been of great importance for many model systems in nanoelectronics. Until now, however, controlling the electron spins or, more specifically, the magnetism of a system by electric-field tuning has proven challenging1-4. Recently, atomically thin magnetic semiconductors have attracted significant attention due to their emerging new physical phenomena5-13. However, many issues are yet to be resolved to convincingly demonstrate gate-controllable magnetism in these two-dimensional materials. Here, we show that, via electrostatic gating, a strong field effect can be observed in devices based on few-layered ferromagnetic semiconducting Cr2Ge2Te6. At different gate doping, micro-area Kerr measurements in the studied devices demonstrate bipolar tunable magnetization loops below the Curie temperature, which is tentatively attributed to the moment rebalance in the spin-polarized band structure. Our findings of electric-field-controlled magnetism in van der Waals magnets show possibilities for potential applications in new-generation magnetic memory storage, sensors and spintronics.

PMID:
29967458
DOI:
10.1038/s41565-018-0186-z

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