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Nat Commun. 2018 Jun 28;9(1):2516. doi: 10.1038/s41467-018-04953-8.

Very large tunneling magnetoresistance in layered magnetic semiconductor CrI3.

Author information

1
Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, CH-1211, Geneva, Switzerland. zhe.wang@unige.ch.
2
Group of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, CH-1211, Geneva, Switzerland. zhe.wang@unige.ch.
3
Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, CH-1211, Geneva, Switzerland.
4
Group of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, CH-1211, Geneva, Switzerland.
5
Institute of Quantum Electronics, ETH Zürich, CH-8093, Zürich, Switzerland.
6
National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan.
7
Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, CH-1211, Geneva, Switzerland. Alberto.Morpurgo@unige.ch.
8
Group of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, CH-1211, Geneva, Switzerland. Alberto.Morpurgo@unige.ch.

Abstract

Magnetic layered van der Waals crystals are an emerging class of materials giving access to new physical phenomena, as illustrated by the recent observation of 2D ferromagnetism in Cr2Ge2Te6 and CrI3. Of particular interest in semiconductors is the interplay between magnetism and transport, which has remained unexplored. Here we report magneto-transport measurements on exfoliated CrI3 crystals. We find that tunneling conduction in the direction perpendicular to the crystalline planes exhibits a magnetoresistance as large as 10,000%. The evolution of the magnetoresistance with magnetic field and temperature reveals that the phenomenon originates from multiple transitions to different magnetic states, whose possible microscopic nature is discussed on the basis of all existing experimental observations. This observed dependence of the conductance of a tunnel barrier on its magnetic state is a phenomenon that demonstrates the presence of a strong coupling between transport and magnetism in magnetic van der Waals semiconductors.

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