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J Nanosci Nanotechnol. 2018 Oct 1;18(10):7315. doi: 10.1166/jnn.2018.16036.

A 1T Dynamic Random Access Memory Cell Based on Gated Thyristor with Surrounding Gate Structure for High Scalability (Journal of Nanoscience and Nanotechnology, Vol. 18(9), pp. 5919-5924 (2018)).

PMID:
29954579
DOI:
10.1166/jnn.2018.16036

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