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ACS Appl Mater Interfaces. 2018 Jul 18;10(28):23910-23917. doi: 10.1021/acsami.8b07034. Epub 2018 Jul 2.

Recovery Improvement for Large-Area Tungsten Diselenide Gas Sensors.

Author information

1
School of Electrical and Electronic Engineering , Yonsei University , 50 Yonsei-Ro , Seodaemun-gu, Seoul 03722 , Republic of Korea.

Abstract

Semiconducting two-dimensional transition-metal dichalcogenides are considered promising gas-sensing materials because of their large surface-to-volume ratio, excellent electrical conductivity, and susceptible surfaces. However, enhancement of the recovery performance has not yet been intensively explored. In this study, a large-area uniform WSe2 is synthesized for use in a high-performance semiconductor gas sensor. At room temperature, the WSe2 gas sensor shows a significantly high response (4140%) to NO2 compared to the use of NH3, CO2, and acetone. This paper demonstrates improved recovery of the WSe2 gas sensor's NO2-sensing performance by utilizing external thermal energy. In addition, a novel strategy for improving the recovery of the WSe2 gas sensor is realized by reacting NH3 and adsorbed NO2 on the surface of WSe2: the NO2 molecules are spontaneously desorbed, and the recovery time is dramatically decreased (85 min → 43 s). It is expected that the fast recovery of the WSe2 gas sensor achieved here will be used to develop an environmental monitoring system platform.

KEYWORDS:

atomic layer deposition; gas sensor; recovery improvement; room-temperature operating; selective catalytic reduction; transition-metal dichalcogenide; tungsten diselenide

PMID:
29932675
DOI:
10.1021/acsami.8b07034

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