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ACS Appl Mater Interfaces. 2018 Jun 20;10(24):20213-20218. doi: 10.1021/acsami.8b04056. Epub 2018 Jun 11.

Interband Transitions in Monolayer and Few-Layer WSe2 Probed Using Photoexcited Charge Collection Spectroscopy.

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Reality Display Device Research Group , Electronics and Telecommunications Research Institute , 218 Gajeong-ro, Yuseong-gu , Daejeon 34129 , Republic of Korea.
Department of Physics , Kunsan National University , Gunsan 54150 , Republic of Korea.
Department of Physics , Yonsei University , 50 Yonsei-ro, Seodaemun-gu , Seoul 03722 , Republic of Korea.


Transition-metal dichalcogenides are currently under rigorous investigation because of their distinct layer-dependent physical properties originating from the corresponding evolution of the band structure. Here, we report the highly resolved probing of layer-dependent band structure evolution for WSe2 using photoexcited charge collection spectroscopy (PECCS). Monolayer, few-layer, and multilayer WSe2 can be probed in top-gate field-effect transistor platforms, and their interband transitions are efficiently observed. Our theoretical calculations show a great coincidence with the PECCS results, proving that the indirect Γ-K and Γ-Λ transitions as well as the direct K-K transition are clearly resolved in multilayer WSe2 by PECCS.


WSe2; field-effect transistor; first-principles calculation; interband transition; transition-metal dichalcogenide


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