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ACS Appl Mater Interfaces. 2018 Jun 27;10(25):21755-21763. doi: 10.1021/acsami.8b07850. Epub 2018 Jun 13.

Interface State-Induced Negative Differential Resistance Observed in Hybrid Perovskite Resistive Switching Memory.

Author information

1
Key Laboratory for UV Light-Emitting Materials and Technology, Ministry of Education , Northeast Normal University , 5268 Renmin Street , Changchun 130024 , China.

Abstract

Hybrid organic-inorganic perovskite, well-known as light-absorbing materials in solar cells, have recently attracted considerable interest for applications in resistive switching (RS) memory. A better understanding of the role of interface state in hybrid perovskite materials on RS behavior is essential for the development of practical devices. Here, we study the influence of interface state on the RS behavior of an Au/CH3NH3PbI3/FTO memory device using a simple air exposure method. We observe a transition of RS hysteresis behavior with exposure time. Initially no hysteresis is apparent, but air exposure induces bipolar RS and a negative differential resistance (NDR) phenomenon. The reductions of I/Pb atomic ratio and work function on the film surface are examined using XPS spectra and Kelvin probe technique, verifying the produce of donor-type interface states (e.g., iodine vacancies) during CH3NH3PbI3 film degradation. Studies on complex impedance spectroscopy confirm the responsibility of interface states in NDR behavior. Eventually, the trapping/detrapping of electrons in bulk defects and at interface states accounts for the bipolar RS behavior accompanied with the NDR effect.

KEYWORDS:

bipolar resistive switching; hybrid perovskite; interface state; iodine vacancies; negative differential resistance

PMID:
29873232
DOI:
10.1021/acsami.8b07850

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