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Adv Mater. 2018 Jul;30(28):e1800327. doi: 10.1002/adma.201800327. Epub 2018 May 21.

Synergies of Electrochemical Metallization and Valance Change in All-Inorganic Perovskite Quantum Dots for Resistive Switching.

Author information

1
College of Electronic Science and Technology, Shenzhen University, Shenzhen, 518060, P. R. China.
2
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China.
3
Shenzhen Key Laboratory of Laser Engineering, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China.
4
Department of Chemistry, South University of Science and Technology of China, No 1088, Xueyuan Road, Xili, Nanshan District, Shenzhen, Guangdong, 518055, P. R. China.
5
Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China.
6
Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, P. R. China.

Abstract

The in-depth understanding of ions' generation and movement inside all-inorganic perovskite quantum dots (CsPbBr3 QDs), which may lead to a paradigm to break through the conventional von Neumann bottleneck, is strictly limited. Here, it is shown that formation and annihilation of metal conductive filaments and Br- ion vacancy filaments driven by an external electric field and light irradiation can lead to pronounced resistive-switching effects. Verified by field-emission scanning electron microscopy as well as energy-dispersive X-ray spectroscopy analysis, the resistive switching behavior of CsPbBr3 QD-based photonic resistive random-access memory (RRAM) is initiated by the electrochemical metallization and valance change. By coupling CsPbBr3 QD-based RRAM with a p-channel transistor, the novel application of an RRAM-gate field-effect transistor presenting analogous functions of flash memory is further demonstrated. These results may accelerate the technological deployment of all-inorganic perovskite QD-based photonic resistive memory for successful logic application.

KEYWORDS:

RRAM; ion vacancy; metal conductive filament; perovskite; quantum dots

PMID:
29782667
DOI:
10.1002/adma.201800327

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