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Adv Mater. 2018 Jul;30(28):e1800327. doi: 10.1002/adma.201800327. Epub 2018 May 21.

Synergies of Electrochemical Metallization and Valance Change in All-Inorganic Perovskite Quantum Dots for Resistive Switching.

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College of Electronic Science and Technology, Shenzhen University, Shenzhen, 518060, P. R. China.
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China.
Shenzhen Key Laboratory of Laser Engineering, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China.
Department of Chemistry, South University of Science and Technology of China, No 1088, Xueyuan Road, Xili, Nanshan District, Shenzhen, Guangdong, 518055, P. R. China.
Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China.
Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, P. R. China.


The in-depth understanding of ions' generation and movement inside all-inorganic perovskite quantum dots (CsPbBr3 QDs), which may lead to a paradigm to break through the conventional von Neumann bottleneck, is strictly limited. Here, it is shown that formation and annihilation of metal conductive filaments and Br- ion vacancy filaments driven by an external electric field and light irradiation can lead to pronounced resistive-switching effects. Verified by field-emission scanning electron microscopy as well as energy-dispersive X-ray spectroscopy analysis, the resistive switching behavior of CsPbBr3 QD-based photonic resistive random-access memory (RRAM) is initiated by the electrochemical metallization and valance change. By coupling CsPbBr3 QD-based RRAM with a p-channel transistor, the novel application of an RRAM-gate field-effect transistor presenting analogous functions of flash memory is further demonstrated. These results may accelerate the technological deployment of all-inorganic perovskite QD-based photonic resistive memory for successful logic application.


RRAM; ion vacancy; metal conductive filament; perovskite; quantum dots


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