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ACS Appl Mater Interfaces. 2018 Jun 13;10(23):19836-19843. doi: 10.1021/acsami.8b06246. Epub 2018 May 30.

High-Performance Photovoltaic Readable Ferroelectric Nonvolatile Memory Based on La-Doped BiFeO3 Films.

Author information

1
Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, Institute of Advanced Materials Physics, Faculty of Science , Tianjin University , Tianjin 300350 , People's Republic of China.

Abstract

Epitaxial La0.1Bi0.9FeO3 (LBFO) films with SrRuO3 (SRO) bottom electrodes were fabricated on SrTiO3(001) substrates by magnetron sputtering. The LBFO thin films exhibit strong ferroelectric properties. Nonvolatile reversible resistance switchings and switchable photovoltaic effects controlled by electric field have been observed in Pt/LBFO/SRO heterostructures. With the optimized LBFO film thickness, the observed room temperature pulsed-read resistance switching ratio can reach 105% magnitude by applying ±2.7 V pulse voltages. Besides, the observed ferroelectric switchable photovoltaic effect in the visible wavelength range shows a large tunable open-circuit photovoltage from -75 to -330 mV. The switching mechanisms in resistance and photovoltaic effects are demonstrated to be directly related to the ferroelectric reversal, which can be attributed to the polarization-modulated interfacial barriers and deep trap states.

KEYWORDS:

bismuth ferrite; heterostructure; photovoltaic effect; polarization; resistance switching

PMID:
29781272
DOI:
10.1021/acsami.8b06246

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