Format

Send to

Choose Destination
Sci Rep. 2018 May 8;8(1):7144. doi: 10.1038/s41598-018-22355-0.

Observation of negative differential resistance in mesoscopic graphene oxide devices.

Author information

1
Samsung-SKKU Graphene Center, Sungkyunkwan Advanced Institute of Nanotechnology (SAINT) and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon, 16419, Korea.
2
Manufacturing Engineering Team, Memory Division, Samsung Electronics Co, Hwasung, 18396, Korea.
3
Department of Electrical-Electronics Engineering, Nuh Naci Yazgan University, 38090, Kayseri, Turkey.
4
Department of Energy Engineering, Konkuk University, 120 Neungdong-ro, Gwangjin-gu, Seoul, 05029, South Korea.
5
School of Advanced Materials Science and Engineering, SKKU Advanced Institute of Nanotechnology (SAINT), Center for Human Interface Nanotechnology (HINT), and IBS Center for Integrated Nanostructure Physics, Sungkyunkwan University, Suwon, 16419, Korea.
6
ICT Components and Materials Technology Research Division, Electronics and Telecommunications Research Institute, Daejeon, 34129, Korea.
7
Department of Mechanical and Nuclear Engineering, The Pennsylvania State University, University Park, PA, 16802, USA.
8
Samsung-SKKU Graphene Center, Sungkyunkwan Advanced Institute of Nanotechnology (SAINT) and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon, 16419, Korea. ghkim@skku.edu.

Abstract

The fractions of various functional groups in graphene oxide (GO) are directly related to its electrical and chemical properties and can be controlled by various reduction methods like thermal, chemical and optical. However, a method with sufficient controllability to regulate the reduction process has been missing. In this work, a hybrid method of thermal and joule heating processes is demonstrated where a progressive control of the ratio of various functional groups can be achieved in a localized area. With this precise control of carbon-oxygen ratio, negative differential resistance (NDR) is observed in the current-voltage characteristics of a two-terminal device in the ambient environment due to charge-activated electrochemical reactions at the GO surface. This experimental observation correlates with the optical and chemical characterizations. This NDR behavior offers new opportunities for the fabrication and application of such novel electronic devices in a wide range of devices applications including switches and oscillators.

Supplemental Content

Full text links

Icon for Nature Publishing Group Icon for PubMed Central
Loading ...
Support Center