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ACS Appl Mater Interfaces. 2018 May 16;10(19):16613-16622. doi: 10.1021/acsami.8b02433. Epub 2018 May 3.

Effect of Static and Rotating Magnetic Fields on Low-Temperature Fabrication of InGaZnO Thin-Film Transistors.

Author information

1
School of Electrical and Electronic Engineering , Yonsei University , 50 Yonsei-ro , Seodaemun-gu, Seoul 03722 , Republic of Korea.

Abstract

We suggest thermal treatment with static magnetic fields (SMFs) or rotating magnetic fields (RMFs) as a new technique for the activation of indium-gallium-zinc oxide thin-film transistors (IGZO TFTs). Magnetic interactions between metal atoms in IGZO films and oxygen atoms in air by SMFs or RMFs can be expected to enhance metal-oxide (M-O) bonds, even at low temperature (150 °C), through attraction of metal and oxygen atoms having their magnetic moments aligned in the same direction. Compared to IGZO TFTs with only thermal treatment at 300 °C, IGZO TFTs under an RMF (1150 rpm) at 150 °C show superior or comparable characteristics: field-effect mobility of 12.68 cm2 V-1 s-1, subthreshold swing of 0.37 V dec-1, and on/off ratio of 1.86 × 108. Although IGZO TFTs under an SMF (0 rpm) can be activated at 150 °C, the electrical performance is further improved in IGZO TFTs under an RMF (1150 rpm). These improvements of IGZO TFTs under an RMF (1150 rpm) are induced by increases in the number of M-O bonds due to enhancement of the magnetic interaction per unit time as the rpm value increases. We suggest that this new process of activating IGZO TFTs at low temperature widens the choice of substrates in flexible or transparent devices.

KEYWORDS:

InGaZnO; ferromagnetism; flexible thin-film transistor; magnetic moment; oxygen vacancy; static and rotating magnetic field

PMID:
29682960
DOI:
10.1021/acsami.8b02433

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