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Nanoscale. 2018 May 3;10(17):8133-8138. doi: 10.1039/c8nr00210j.

Pulse laser-induced size-controllable and symmetrical ordering of single-crystal Si islands.

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Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo, Zhejiang 315211, People's Republic of China.


Optically electric- and magnetic resonance-induced dielectric nanostructures have garnered significant attention due to applications as tunable electronic and optoelectronic device. In this letter, we describe an ultrafast and large-area method to construct symmetrical and single-crystal Si island structures directly on Si substrates by a pulse laser dewetting method. The tunable surface electric field intensity distribution could convert the stochastic dewetting process into a deterministic process (classical dipole mode and Mie resonance dipole mode) on predefined Si pit arrays via laser dewetting. Under this condition, these pre-patterned Si substrate structures not only induced high spatial ordering of islands, but also improved their size uniformity. By adjusting the laser fluence, the diameter of the single-crystal Si islands could be selected in the range 41.7-147.1 nm.


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