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Sci Rep. 2018 Apr 3;8(1):5546. doi: 10.1038/s41598-018-23892-4.

Facile fabrication of wire-type indium gallium zinc oxide thin-film transistors applicable to ultrasensitive flexible sensors.

Author information

1
School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea.
2
School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea. hjk3@yonsei.ac.kr.

Abstract

We fabricated wire-type indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) using a self-formed cracked template based on a lift-off process. The electrical characteristics of wire-type IGZO TFTs could be controlled by changing the width and density of IGZO wires through varying the coating conditions of template solution or multi-stacking additional layers. The fabricated wire-type devices were applied to sensors after functionalizing the surface. The wire-type pH sensor showed a sensitivity of 45.4 mV/pH, and this value was an improved sensitivity compared with that of the film-type device (27.6 mV/pH). Similarly, when the wire-type device was used as a glucose sensor, it showed more variation in electrical characteristics than the film-type device. The improved sensing properties resulted from the large surface area of the wire-type device compared with that of the film-type device. In addition, we fabricated wire-type IGZO TFTs on flexible substrates and confirmed that such structures were very resistant to mechanical stresses at a bending radius of 10 mm.

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