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Nat Chem. 2018 Jun;10(6):638-643. doi: 10.1038/s41557-018-0035-6. Epub 2018 Apr 2.

High phase-purity 1T'-MoS2- and 1T'-MoSe2-layered crystals.

Yu Y1,2,3, Nam GH1,4, He Q1, Wu XJ1, Zhang K5, Yang Z6, Chen J1, Ma Q1, Zhao M1, Liu Z1, Ran FR7, Wang X8, Li H7, Huang X7, Li B9, Xiong Q8, Zhang Q5, Liu Z1, Gu L6,10,11, Du Y12, Huang W7,13,14, Zhang H15.

Author information

1
Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore.
2
Department of Chemistry, School of Science, Tianjin University, Tianjin, China.
3
Collaborative Innovation Center of Chemical Science and Engineering, Tianjin, China.
4
HealthTech NTU, Interdisciplinary Graduate School, Nanyang Technological University, Singapore, Singapore.
5
School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, Singapore.
6
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China.
7
Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), Nanjing, China.
8
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore.
9
Institute of Materials Research and Engineering A*STAR (Agency for Science, Technology and Research), Singapore, Singapore.
10
Collaborative Innovation Center of Quantum Matter, Beijing, China.
11
School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China.
12
Institute of Chemical and Engineering Sciences, A*STAR, Singapore, Singapore.
13
Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials, Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications, Nanjing, China.
14
Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), Xi'an, China.
15
Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore. HZhang@ntu.edu.sg.

Abstract

Phase control plays an important role in the precise synthesis of inorganic materials, as the phase structure has a profound influence on properties such as conductivity and chemical stability. Phase-controlled preparation has been challenging for the metallic-phase group-VI transition metal dichalcogenides (the transition metals are Mo and W, and the chalcogens are S, Se and Te), which show better performance in electrocatalysis than their semiconducting counterparts. Here, we report the large-scale preparation of micrometre-sized metallic-phase 1T'-MoX2 (X = S, Se)-layered bulk crystals in high purity. We reveal that 1T'-MoS2 crystals feature a distorted octahedral coordination structure and are convertible to 2H-MoS2 following thermal annealing or laser irradiation. Electrochemical measurements show that the basal plane of 1T'-MoS2 is much more active than that of 2H-MoS2 for the electrocatalytic hydrogen evolution reaction in an acidic medium.

PMID:
29610461
DOI:
10.1038/s41557-018-0035-6

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